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BC369 - PNP Transistor

Key Features

  • High Current Low Voltage.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc Silicon PNP Transistor BC369 FEATURES ·High Current Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation Rth j-a Thermal Resistance,Junction to Ambient TJ Junction Temperature Tstg Storage Temperature Range VALUE -25 -20 -5 UNIT V V V -1 A 625 mW 200 ℃/W 150 ℃ -55~150 ℃ isc website： www.iscsemi.