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B992 - 2SB992

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Collector Power Dissipation- : PC= 40W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ IC= -4A Complement to Type 2SD1362 APPLICATIONS

High current switching applications.

Power amplifier app

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INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB992 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ IC= -4A ·Complement to Type 2SD1362 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -1 A 1.
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