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B679 - Silicon PNP Power Transistor

Description

High Power Dissipation- : PC= 100W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 APPLICATIONS

Designed for audio power amplifier applications.

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature -120 V -5 V -12 A 12 A 100 W 150 ℃ -65~150 ℃ isc Website：www.iscsemi.
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