B1353 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

Good Linearity of hFE Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Complement to Type 2SD2033 APPLICATIONS

Designed for use in high voltage driver applications.

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Datasheet Details

Part number	B1353
Manufacturer	Inchange Semiconductor
File Size	176.67 KB
Description	Silicon PNP Power Transistor
Datasheet	B1353 Datasheet

Full PDF Text Transcription for B1353 (Reference)

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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Ty...

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or-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1.5 A 1.8 W 20 150 ℃ -55~150 ℃ Product Specification 2SB1353 isc website：www.iscsemi.

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