Datasheet4U Logo Datasheet4U.com

AOD4185 - P-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= -40A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -40V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Alpha & Omega Semiconductors Logo AOD4185 40V P-Channel MOSFET Alpha & Omega Semiconductors
VBsemi Logo AOD4185 P-Channel MOSFET VBsemi

More Datasheets from Inchange Semiconductor

Part Number Description
AOD418 N-Channel MOSFET
AOD4180 N-Channel MOSFET
AOD4182 N-Channel MOSFET
AOD4184 N-Channel MOSFET
AOD4184A N-Channel MOSFET
AOD4186 N-Channel MOSFET
AOD4189 P-Channel MOSFET
AOD4102 N-Channel MOSFET
AOD4120 N-Channel MOSFET
AOD4124 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor AOD4185 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -40 A IDM Drain Current-Single Pluse -115 A PD Total Dissipation @TC=25℃ 62.5 W TJ Max.