Full PDF Text Transcription for AOD2910E (Reference)
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AOD2910E. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Mini...
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high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Industrial and motor drive applications ·DC/DC and AC/DC converters ·Switching applications INCHANGE Semiconductor AOD2910E ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 37 26 70 PD Total Dissipation 71.
AOD2910E Datasheet
