Datasheet Details
| Part number | A795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 78.37 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 A795 Datasheet
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| Part number | A795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 78.37 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
A795 Datasheet
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·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -150 -5 -1 -1.5 10 150 -55~150 V V A A W ℃ ℃ isc Product Specification 2SA795 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA795 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA;
INCHANGE Semiconductor isc Silicon PNP Power Transistor.
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