Datasheet Details
| Part number | A1964 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 A1964 Datasheet
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| Part number | A1964 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
A1964 Datasheet
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·CollectorEmitter Breakdown Voltage : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO CollectorBase Voltage 160 V VCEO CollectorEmitter Voltage 160 V VEBO EmitterBase Voltage 5 V IC Collector CurrentContinuous Collector Power Dissipation @Ta=25℃ 1.5 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 150 ℃ Tstg Storage Temperature 55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1964 TYP. MAX UNIT V(BR)CEO CollectorEmitter Breakdown Voltage IC= 1mA; IB= 0 IC= 50μA; IE= 0 IE= 50μA; IC= 0 160 V V(BR)CBO CollectorBase Breakdown Voltage 160 V V(BR)EBO EmitterBase Breakdown Voltage 5 V VCE(sat) ICBO CollectorEmitter Saturation Voltage IC= 1A; IB= 0.1A 1.0 V μA μA Collector Cutoff Current VCB= 160V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 hFE DC Current Gain IC= 0.1A; VCE= 5V 60 200 fT CurrentGain—Bandwidth Product IC= 0.2A; VCE= 10V 150 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF u hFE Classifications D 60120 E 100200 isc website：www.iscsemi.cn 2
INCHANGE Semiconductor Product Specification isc Silicon PNP Power Transistor .
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