Datasheet Details
| Part number | A0718 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.63 KB |
| Description | PNP Transistor |
| Datasheet |
 A0718 Datasheet
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| Part number | A0718 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.63 KB |
| Description | PNP Transistor |
| Datasheet |
A0718 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor A0718 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4.0A;
isc Silicon PNP Power Transistor INCHANGE Semiconductor A0718.
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