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65N06 - N-Channel MOSFET

Description

power supplies, converters and power motor controls.

Features

  • Drain Current.
  • ID=63A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max).
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=63A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ TJ Max.
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