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3DD5606 - NPN Transistor

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Part number 3DD5606
Manufacturer INCHANGE
File Size 205.52 KB
Description NPN Transistor
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Description

High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC

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