Datasheet4U Logo Datasheet4U.com

3DD3997 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 3DD3997

Datasheet Details

Part number 3DD3997
Manufacturer INCHANGE
File Size 208.30 KB
Description NPN Transistor
Datasheet download datasheet 3DD3997 Datasheet
Additional preview pages of the 3DD3997 datasheet.

Product details

Description

High Switching Speed High Breakdown Voltage- : V(BR)CBO= 1200V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation.APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7

📁 Similar Datasheet

  • 3DD3010A1 - Silicon NPN Transistor (Huajing Microelectronics)
  • 3DD3015A1 - Silicon NPN Transistor (Huajing Microelectronics)
  • 3DD3015A1-H - Silicon NPN bipolar transistor (Huajing Microelectronics)
  • 3DD3015A3 - Silicon NPN Transistor (Huajing Microelectronics)
  • 3DD301B - Silicon Power Transistor (Inchange)
  • 3DD301C - Silicon Power Transistor (Inchange)
  • 3DD301D - Silicon Power Transistor (Inchange)
  • 3DD3020A3 - Silicon NPN Transistor (Huajing Microelectronics)
Other Datasheets by INCHANGE
Published: |