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2SD956 - NPN Transistor

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Part number 2SD956
Manufacturer INCHANGE
File Size 193.77 KB
Description NPN Transistor
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Description

High Breakdown Voltage- : VCBO= 1500V (Min) Low Collector Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5

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