Datasheet4U Logo Datasheet4U.com

2SD2045 - Silicon NPN Darlington Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2045 Silicon NPN Transistor Sanken electric
2SD2045 NPN-PNP Transistors SeCoS
2SD2041 TAPED POWER TRANSISTOR Rohm
2SD2046 Silicon NPN Transistor Hitachi Semiconductor
2SD2047R Power Transistor Fuji Electric

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD2047 NPN Transistor
2SD200 NPN Transistor
2SD2000 NPN Transistor
2SD2001 NPN Transistor
2SD201 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed of driver of solenoid,motor and general purpose applications.