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isc Silicon NPN Power Transistors
DESCRIPTION With TO-3 package
·Large current capability ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio frequency output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=75℃
TJ
Junction Temperature
7
A
60
W
150
℃
Tstg
Storage Temperature
-55~150
℃
2SD188
isc website:www.iscsemi.