Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
High DC Current Gain
: hFE= 1000(Min) @IC= 1.0A
Low Saturation Voltage
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1647
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A ·High DC Current Gain
: hFE= 1000(Min) @IC= 1.0A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low frequency
power Amp applications.
2SD1647 Datasheet
