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2SD1564 - NPN Transistor

Description

Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A High DC Current Gain : hFE= 2000(Min) @IC= 2A Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1564 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50-70 V 7 V 5 A 10 A 0.
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