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2SD1558 - NPN Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1558 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
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