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2SD1263 - NPN Transistor

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Part number 2SD1263
Manufacturer INCHANGE
File Size 190.13 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) High Collector Power Dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification applications.

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