Datasheet4U Logo Datasheet4U.com

2SD1139 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflecti

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1133 NPN TRANSISTOR Hitachi Semiconductor
2SD1133 (2SD1133 / 2SD1134) SILICON POWER TRANSISTOR SavantIC
2SD1133 Silicon NPN Transistor Renesas
2SD1134 NPN TRANSISTOR Hitachi Semiconductor
2SD1134 (2SD1133 / 2SD1134) SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD113 NPN Transistor
2SD1133 NPN Transistor
2SD1134 NPN Transistor
2SD1135 NPN Transistor
2SD1136 NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.
Published: |