High Breakdown Voltage-
:VCBO= 1500V (Min)
High Switching Speed
Low Saturation Voltage
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Horizontal deflection output for high medium resolution
display&
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
:VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for high medium resolution
display& color TV. ·High speed switching applications.