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2SC4789 - NPN Transistor

Description

Silicon NPN triple diffused High Switching Speed High Breakdown Voltage High speed switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deffection output

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isc Silicon NPN Power Transistor isc Product Specification 2SC4789 DESCRIPTION ·Silicon NPN triple diffused ·High Switching Speed ·High Breakdown Voltage ·High speed switching time ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deffection output ·Suitable for large size CRT display ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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