Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
High DC Current Gain
: hFE= 2000~20000(Min) @IC= 5A
Fast Switching Speed
Good Linearity of hFE
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SC4350
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min) ·High DC Current Gain
: hFE= 2000~20000(Min) @IC= 5A ·Fast Switching Speed ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-precision control such as PWM control for
pulse motors or brushless motors in OA and FA equipment.