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2SC3762 - NPN Transistor

Description

High Breakdown Voltage- : VCBO= 150V (Min) High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high speed and power Switching applicat

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3762 DESCRIPTION ·High Breakdown Voltage- : VCBO= 150V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high speed and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 65 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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