Datasheet4U Logo Datasheet4U.com

2SC3591 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SC3591

Datasheet Details

Part number 2SC3591
Manufacturer INCHANGE
File Size 190.28 KB
Description NPN Transistor
Datasheet download datasheet 2SC3591 Datasheet
Additional preview pages of the 2SC3591 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collecto

📁 Similar Datasheet

  • 2SC3591 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3591 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3590 - Power Transistor (Inchange Semiconductor)
  • 2SC3595 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3596 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3597 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3598 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3599 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
Other Datasheets by INCHANGE
Published: |