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2SC3281 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier appl

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
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