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2SC3258 - NPN Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max.)@ IC= 3A High Switching Speed Complement to Type 2SA1293 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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isc Silicon NPN Power Transistor 2SC3258 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max.)@ IC= 3A ·High Switching Speed ·Complement to Type 2SA1293 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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