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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 450V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat) ≤ 1 V@ IC = 4A ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For switching regulator and DC/DC converter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
30
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
200
W
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
2SC3058A Datasheet
