Collector-Emitter Breakdown Voltage-
V(BR)CEO= 40V (Min)
Good Linearity of hFE
Complement to Type 2SA1217
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power amplifier and low
speed switching appl
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 40V (Min) ·Good Linearity of hFE ·Complement to Type 2SA1217 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed switching applications. ·Suitable for output stage of 5 watts car radio and car stereo.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
40
V
VCEO Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2877
isc website：www.
2SC2877 Datasheet
