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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2794
DESCRIPTION ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The 2SC2794 is suitable for low power switching
regulator, DC-DC converter and high voltage switch.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCER
Collector-Emitter Voltage RBE=150Ω
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
2
A
25
W
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SC2794 Datasheet
