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2SC2485 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High Power Dissipation Complement to Type 2SA1061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLU

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation ·Complement to Type 2SA1061 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2485 isc website：www.iscsemi.
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