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2SC2365 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2365 isc website：www.iscsemi.