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2SC1969 - Silicon NPN Power Transistor

General Description

With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters

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isc Silicon NPN RF Power Transistor INCHANGE Semiconductor 2SC1969 DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature Range 20 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Ju