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2SC1847 - NPN Transistor

General Description

High Collector Current-IC= 1.5A Low Saturation Voltage : VCE(sat)= 1V(Max)@ IC= 2.0A, IB= 0.2A Good Linearity of hFE Complement to Type 2SA0886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage o

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·Low Saturation Voltage : VCE(sat)= 1V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Complement to Type 2SA0886 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.