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2SC1368 - NPN Transistor

Description

High Collector Current IC= 1.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min) Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1368 DESCRIPTION ·High Collector Current IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 8 W 0.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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