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2SB747 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD812 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power amplifier applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD812 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·Suitable for 15~20W home stereo output amplifier and voltage regulator.