Low Collector Saturation Voltage
:VCE(sat)= -1.0(V)(Max)@IC= -2A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
Complement to Type 2SD476
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency p
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isc Silicon PNP Power Transistor
2SB566
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -1.0(V)(Max)@IC= -2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·Complement to Type 2SD476 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier and power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-70
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SB566 Datasheet
