2SB337 - PNP Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -0.29V(Typ.) @IC= -4A High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency power output applications.

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2SB337 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB337
Manufacturer	Inchange Semiconductor
File Size	206.60 KB
Description	PNP Transistor
Datasheet	2SB337 Datasheet

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isc Silicon PNP Power Transistors 2SB337 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.29V(Typ.) @IC= -4A ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCER Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous 7 A IB Base Current-Continuous -1 A PC Collector Power Dissipation 30 W TJ Junction Temperature 100 ℃ Tstg Storage Temperature -55~100 ℃ isc website：www.iscsemi.