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2SB1495 - PNP Transistor

General Description

High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) Low-Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@IC= -1.5A Complement to Type 2SD2257 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power

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isc Silicon PNP Darlington Power Transistor 2SB1495 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@IC= -1.5A ·Complement to Type 2SD2257 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.