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2SB1468 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) Complement to Type 2SD2219 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) ·Complement to Type 2SD2219 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1468 isc website：www.