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2SB1454 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -3A, IB= -0.3A) Complement to Type 2SD2202 Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1454 APPLICATIONS Desi

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type 2SD2202 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1454 APPLICATIONS ·Designed for high-current switching applications.