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2SB1347 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Wide Area of Safe Operation Complement to Type 2SD2029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage

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isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2029 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -20 A 120 W 3.