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2SB1154 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -6A Complement to Type 2SD1705 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor 2SB1154 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.