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2SB1096 - PNP Transistor

General Description

High Collector Current:: IC= -2A Good Linearity of hFE Complement to Type 2SD1587 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for color TV vertical deflection output applications.

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isc Silicon PNP Power Transistor 2SB1096 DESCRIPTION ·High Collector Current:: IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1587 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Pulse -3 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.0 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.