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2SB1087 - PNP Transistor

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Part number 2SB1087
Manufacturer INCHANGE
File Size 214.21 KB
Description PNP Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V

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