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2SB1023 - PNP Transistor

General Description

High DC C urrent Gain- : hFE= 2000(Min.)@IC= -1A Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -2A Good Linearity of hFE Complement to Type 2SD1413 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching

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isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -1A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1413 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications.