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2N6678 - NPN Transistor

General Description

High Voltage Capability Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications such as: Off-line power supplies Converter circuits

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isc Silicon NPN Power Transistors DESCRIPTION ·High Voltage Capability ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications such as: ·Off-line power supplies ·Converter circuits ·PWM regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 650 V VCEX Collector-Emitter Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 5.