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2N6579 - NPN Transistor

General Description

Excellent Safe Operating Area High Voltage,High Speed Low Saturation Voltage Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Off-line power supplies Switch

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6579 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 9.