Datasheet4U Logo Datasheet4U.com

20N20 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤180mΩ.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Full PDF Text Transcription for 20N20 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 20N20. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor 20N20 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤180mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variat...

View more extracted text
Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 125 Tj Max.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
HUAAN Logo 20N201K Metal Oxide Varistor HUAAN

More Datasheets from Inchange Semiconductor

Part Number Description
20N03 N-Channel MOSFET