12N65KL-TF1-T - N-Channel MOSFET

Inchange Semiconductor

Key Features

Static Drain-Source On-Resistance : RDS(on).

12N65KL-TF1-T n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	12N65KL-TF1-T
Manufacturer	Inchange Semiconductor
File Size	214.90 KB
Description	N-Channel MOSFET
Datasheet	12N65KL-TF1-T Datasheet

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isc N-Channel MOSFET Transistor 12N65KL-TF1-T ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) <0.85Ω ·Simple Drive Requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A Ptot Total Dissipation@TC=25℃ 51 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.